Official Release of Two Isostatic Graphite Standards for SiC Single Crystal Growth

On April 23, 2025, during the 3rd Jiufengshan Forum (JFSC) and Compound Semiconductor Industry Expo (CSE), the Third Generation Semiconductor Industry Technology Innovation Strategic Alliance (CASA) officially released two standards for isostatic graphite used in silicon carbide (SiC) single crystal growth. These standards were led by SIAMC Advanced Materials Co., Ltd. :

· T/CASAS 036—2025 Determination of Purity for Isostatic Graphite Components in SiC Single Crystal Growth—Glow Discharge Mass Spectrometry

· T/CASAS 048—2025 Isostatic Graphite for SiC Single Crystal Growth

The release of these standards aims to provide critical support for the scaled and high-quality development of SiC single crystal growth technology.

Background of Standard Development

The integration of technological innovation and standards often determines the direction of industrial development and the distribution of value chains.

In 2024, China’s SiC substrate output reached 1.2 million wafers, a 60% year-on-year increase, accounting for one-third of global supply and positioning the country among the global leaders. This achievement stems from two decades of sustained investment in SiC substrate R&D and collaborative efforts across the supply chain.

Isostatic graphite, a key consumable in Physical Vapor Transport (PVT) methods for SiC single crystal growth, constitutes 30% of SiC substrate production costs. Its localization, industrialization, and scaling have driven continuous cost reductions, accelerating the adoption of SiC devices in photovoltaic, energy storage, and industrial frequency conversion applications, thereby contributing to China’s dual-carbon strategy.

Expert Commentary

Yang Fuhua, Vice Chairman and Secretary-General of CASA, emphasized in his speech that standards have evolved from traditional benchmarks for product interchangeability and quality assessment to a cornerstone of industrial strategy. The release of these two standards marks a solid step forward in China’s high-end carbon materials sector. CASA has planned over 60 standards to enhance upstream-downstream industry collaboration, boost market confidence, and support high-quality growth. He called for broader industry participation to build an open, shared, and sustainable ecosystem for third-generation semiconductors.

Zhou Ming, Party Secretary and General Manager of Semicon, highlighted the critical role of high-purity isostatic graphite in compound semiconductor manufacturing. The purity, performance, and design of graphite materials significantly impact crystal quality and yield during SiC growth. He noted that stable control of graphite thermal field materials has become a vital factor in single crystal growth. Zhou expressed gratitude to all contributors—users, universities, and research institutes—for providing foundational data and insights during the drafting process. Moving forward, Semicon will collaborate with industry leaders under CASA’s guidance to advance standards for functional graphite materials, composites, and testing methods, further elevating industry standardization.

SIAMC has prioritized standardization, having led or participated in drafting 19 national/industry standards, 1 international advanced standard, and 3 group standards. Leveraging this milestone, the company will strengthen innovation and industry collaboration to build a comprehensive standard system for compound semiconductor-grade graphite and carbon materials, positioning "Made in China" as a global benchmark in semiconductor materials.